Browsing by Author "Al-Ghamdi, Ahmed A."

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Electrical, Kinetic and Photoelectrical Properties of Cualmnmg Shape Memory Alloy/N-Si Schottky Diode
(Elsevier Science Sa, 2021) Canbay, C. Aksu; Tataroglu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, the copper-aluminum-manganese-magnesium (Cu-Al-Mn-Mg) shape memory alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics of the diode were examined by using illumination intensity and frequency dependent current and admittance measurements. Basic electrical parameters such as barrier height (phi b0), ideality factor (n), and series (Rs) and shunt (Rsh) resistances of the generated diode were obtained from the measured current-voltage (I-V) data using thermionic emission (TE) theory. Illumination impact on the diode parameters indicate that the device displays photoconducting behavior. Furthermore, the phi b0 value was established from Norde method. There is a good agreement between phi b0 values acquired from conventional I-V and Norde method. It was observed that the rise in the applied illumination intensity increased the values of Rs and Rsh. In addition, the ad-mittance (Y=G+i omega C) measurements were carried out in a wide frequency range. As a result of the experi-mental measurements, it has been shown that the produced CuAlMnMg/n-Si Schottky diode can be operated in optoelectronic practices, especially as a photodiode. (c) 2021 Elsevier B.V. All rights reserved.
Photodiode Performance and Infrared Light Sensing Capabilities of Quaternary Cu2ZnSnS4 Chalcogenide
(Elsevier, 2022) Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Dere, Aysegul; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, quaternary Cu2ZnSnS4 chalcogenide nanocrystal compound prepared by hydrothermal method was coated on Si with the help of spin coating technique to be used as the interfacial layer. SEM and EDX analyzes were performed to investigate the morphological and structural properties of the coated film. In order to determine the optical properties, IR and UV-Vis measurements were made and it was determined that the absorption properties of the material were good in the visible and infrared region, and the optical band gap value was found to be 1.49 eV. In addition, photoelectrical measurements (current-voltage and photo-transient) were performed and evaluated under both solar and infrared lights. As a result of these measurements, it was determined that the photoresponse value gave better results in the measurements made under sunlight. The calculated ideality factor (barrier height) values in the light of the data obtained were found to be 5.087 (0.456 eV), 6.422 (0.449 eV) and 7.789 (0.443 eV) under dark, solar light and infrared light conditions, respectively. As seen from the results, the ideality factor value in the measurements made under solar light is lower than the measurements made under infrared, but the barrier height value is higher. In addition, capacitance-time measurements were performed depending on the light intensity and the produced device showed photocapacitive properties for both light sources. In addition to these measurements, the capacitive properties of the device were also analyzed by taking capacitance and conductivity measurements as a function of frequency and voltage. These measurements revealed that the capacitance and conductivity characteristics of the device are strongly dependent on voltage and frequency. The results of the performed experimental studies confirm that the produced Al/Cu2ZnSnS4/p-Si device is highly sensitive to infrared and sunlight to which it is exposed, and also shows that the produced device configuration can be used in optoelectronic applications.
The Structural, Electrical, and Photoelectrical Properties of Al/Cu2CdSnS4 Chalcogenide Film/P-Si Schottky-Type Photodiode
(Springer, 2023) Al-Sehemi, Abdullah G.; Tataroglu, A.; Dere, Aysegul; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach and deposited on the p-type silicon wafer by the use of the sol-gel technique. Then, the CCTS based Al/Cu2CdSnS4 (CCTS)/p-Si/Al photodiode was produced. The prepared CCTS film was analyzed using various characterization methods such as energy-dispersive X-ray (EDX or EDS), scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectroscopy. Optoelectronic and electronic attributes of the generated photodiode were investigated under the solar light and frequency conditions. The obtained data from the current measurements based on illumination intensity showed that the generated diode exhibits a photovoltaic and photoconductive behavior. In addition, it is found that the conductance and capacitance features of the diode were quite sensitive to frequency. The obtained outcomes indicated that the produced structure could be used in optoelectronic technology, especially in photodiode and solar cell applications.
Zinc Oxide Based 3-Components Semiconductor Oxide Photodiodes by Dynamic Spin Coating Method
(Elsevier Sci Ltd, 2021) Karabulut, Abdulkerim; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, the electrical attributes and exposed solar light impacts on the electrical properties were examined for the Al/p-Si structure having InGaZnO interlayer with different rates of Ga component. The films demonstrated the high transparency in the visible zone within percentages of 84-92%. The prepared films' optical bandgap values were utilized by the aid of optical data, and it is indicated that the bandgap values increased with Ga dopant increases. The electrical characteristics of the produced device and the effect of illumination intensity on these characteristics were investigated by the usage of current-voltage and transient measurements at different intensities of exposed light and the produced devices exhibited photoconducting behavior. In addition, electrical parameters with high importance level such as barrier height and ideality factor were calculated by the help of current-voltage measurements and their values were established at predictable level. The capacitance-voltage and conductance-voltage measurements of the produced device were made, and it was determined that they are depended on voltage and frequency, and also interface conditions and series resistance parameters having very large effects on electrical characteristics were calculated by the help of these measurements. It was determined that the energy band gap of the InGaZnO having different contents of Ga ingredient coincides with the energy levels of the semiconductor and the electrolyte. The analyzed results confirm that the fabricated Al/InGaZnO (with different rates of Ga)/p-Si/Al devices have high sensitivity to illumination applied and could be used in advancing optoelectronic applications, especially as a photodiode.