Browsing by Author "Al-Sehemi, Abdullah G. G."

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The Electronic and Optoelectronic Properties of Al/Hydroxymethyl Functionalized Zn(II)PC/P-Si Photonic Device
(Springer, 2024) Al-Sehemi, Abdullah G. G.; Ocakoglu, Kasim; Ince, Mine; Karabulut, Abdulkerim; Tataroglu, A.; Dere, Aysegul; Yakuphanoglu, F.
In this study, the effects of illumination on the electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si/Al photonic device have been investigated under dark and various lighting conditions. The diode's electronic parameters have been extracted from the current-voltage characteristics. It is observed that the dark current value increases when the light is illuminated on the device, and thus, the photocurrent is formed, and this result has shown that the studied device exhibits a photoconductive behavior. The photoresponse properties of the fabricated device have been examined by transient photocurrent measurements under 100 mW/cm(2) illumination, and they have also been analyzed using photocapacitance and photoconductivity measurements at different frequencies (100 kHz, 500 kHz, and 1 MHz). However, the capacitance data that may occur between the poles of the produced device have also been investigated, and it is thought that the device can also be developed as a capacitor. These results confirm that the hydroxymethyl functionalized Zn(II)Pc and p-silicon semiconductor-based device can be used particularly in electro-optic and photonic applications.
Optoelectronic and Photonic Characteristics of Al/P-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer
(Springer, 2023) Al-Sehemi, Abdullah G. G.; Tataroglu, A.; Karabulut, Abdulkerim; Dere, Aysegul; Al-Ghamdi, Ahmed A. A.; Yakuphanoglu, F.
Al/ZnO/p-Si diodes have been fabricated using different doping concentrations of a boric acid (H3BO3)-doped zinc oxide (ZnO) interlayer. The boric acid-doped ZnO films were obtained by the sol-gel method and coated by the spin-coating technique. The optoelectronic and electronic properties of the prepared diodes were studied under different illumination and frequency conditions. Current measurements of the diodes under both dark and illumination indicate that they exhibit a photovoltaic behavior. The diode with 5 wt.% H3BO3-doped ZnO interlayer showed the best diode properties with a rectification ratio of 4.23 x 10(4) at & PLUSMN; 5 V. Also, the photocurrent, photoconductance, and photocapacitance transients of the diodes prove that they exhibit both photodiode and photocapacitor behavior. In addition, the capacitance and conductance measurements of the diodes were carried out over a wide frequency range. The results denote that the generated diodes can be utilized as photo-diode/capacitors in optoelectronic technologies.