Browsing by Author "Dere, A."

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Electrical, Kinetic and Photoelectrical Properties of Cualmnmg Shape Memory Alloy/N-Si Schottky Diode
(Elsevier Science Sa, 2021) Canbay, C. Aksu; Tataroglu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, the copper-aluminum-manganese-magnesium (Cu-Al-Mn-Mg) shape memory alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics of the diode were examined by using illumination intensity and frequency dependent current and admittance measurements. Basic electrical parameters such as barrier height (phi b0), ideality factor (n), and series (Rs) and shunt (Rsh) resistances of the generated diode were obtained from the measured current-voltage (I-V) data using thermionic emission (TE) theory. Illumination impact on the diode parameters indicate that the device displays photoconducting behavior. Furthermore, the phi b0 value was established from Norde method. There is a good agreement between phi b0 values acquired from conventional I-V and Norde method. It was observed that the rise in the applied illumination intensity increased the values of Rs and Rsh. In addition, the ad-mittance (Y=G+i omega C) measurements were carried out in a wide frequency range. As a result of the experi-mental measurements, it has been shown that the produced CuAlMnMg/n-Si Schottky diode can be operated in optoelectronic practices, especially as a photodiode. (c) 2021 Elsevier B.V. All rights reserved.
Illumination Impact on the Electrical Characteristics of Au/Sunset Yellow/N-Si Hybrid Schottky Diode
(Springer, 2020) Imer, A. G.; Kaya, E.; Dere, A.; Al-Sehemi, A. G.; Al-Ghamdi, A. A.; Karabulut, A.; Yakuphanoglu, F.
In this study, semiconductor device applications of organic material sunset yellow (SY) (C16H10N2Na2O7S2) has been investigated. The SY thin film was grown onn-Si via spin coating method and theAu/SY/n-Si/Auheterojunction was fabricated. The basic diode parameters of device were determined by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at the room temperature. The values of the ideality factory (n) and barrier height (phi(b)) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (R-s) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linearC(-2)-Vcurves with reverse bias room temperature and difference frequency. Furthermore,I-Vmeasurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.
The Photo-Electrical Performance of the Novel Cualmnfe Shape Memory Alloy Film in the Diode Application
(Elsevier, 2021) Canbay, C. Aksu; Tataroglu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Bektas, A.; Yakuphanoglu, F.
In this study, the Cu-Al-Mn-Fe shape memory alloy (SMA) was prepared using arc melting technique. The alloy was examined with help of X-ray diffraction (XRD) and differential scanning calorimetry (DSC) methods. We fabricated Cu-Al-Mn-Fe/n-Si diode by forming the shape memory alloy thin film on n-type silicon. The current-voltage (I-V) measurement of the diode was carried out under different intensities of illumination. The reverse bias current value of the diode under light was found to be greater than the dark condition. The obtained result shows that the diode displays a photoconducting feature. The main electrical parameters of the structure were obtained from the conventional I-V and Norde method. Besides, the transient photocurrent (TPC) measurement was performed under the various illumination intensity conditions. In addition to these experiments, the measurements of the conductance/capacitance-voltage (G/C-V) were carried out at room temperature and different frequencies. It was found that both G and C are quite sensitive to frequency.
Zinc Oxide Based 3-Components Semiconductor Oxide Photodiodes by Dynamic Spin Coating Method
(Elsevier Sci Ltd, 2021) Karabulut, Abdulkerim; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, the electrical attributes and exposed solar light impacts on the electrical properties were examined for the Al/p-Si structure having InGaZnO interlayer with different rates of Ga component. The films demonstrated the high transparency in the visible zone within percentages of 84-92%. The prepared films' optical bandgap values were utilized by the aid of optical data, and it is indicated that the bandgap values increased with Ga dopant increases. The electrical characteristics of the produced device and the effect of illumination intensity on these characteristics were investigated by the usage of current-voltage and transient measurements at different intensities of exposed light and the produced devices exhibited photoconducting behavior. In addition, electrical parameters with high importance level such as barrier height and ideality factor were calculated by the help of current-voltage measurements and their values were established at predictable level. The capacitance-voltage and conductance-voltage measurements of the produced device were made, and it was determined that they are depended on voltage and frequency, and also interface conditions and series resistance parameters having very large effects on electrical characteristics were calculated by the help of these measurements. It was determined that the energy band gap of the InGaZnO having different contents of Ga ingredient coincides with the energy levels of the semiconductor and the electrolyte. The analyzed results confirm that the fabricated Al/InGaZnO (with different rates of Ga)/p-Si/Al devices have high sensitivity to illumination applied and could be used in advancing optoelectronic applications, especially as a photodiode.