Browsing by Author "Incekara, U."

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Dependence of Electrical Parameters of Co/Gold-chloride Diode on Frequency and Illumination
(Elsevier, 2021) Erdogan, E.; Yilmaz, M.; Aydogan, S.; Incekara, U.; Sahin, Y.
In this study, metal-semiconductor contact with an organic interlayer was fabricated. Ideality factor (n), barrier height (phi(b)), and series resistance (R-s) values for Co/Gold-chloride/p-Si structure were calculated for dark and 100-400 mW/cm(2) light illumination intensities. The current-voltage (I-V) measurements were used to extract the electrical parameters of Co/Gold-chloride/p-Si device such as ideality factor, barrier height and series resistance using different methods like thermionic emission theory and Norde method. The n values were found in the range of 2.00-2.52 and the phi(b) were calculated in the range of 0.50-0.53 eV and under light power intensities. Additionally, frequency-dependent capacitance-voltage (C-V) measurements were done at room temperature and frequency range from 100 kHz to 1 MHz. The results show that at sufficiently high frequencies, the interface cannot flow A.C signals. Furthermore, barrier height was also calculated from the C-2-V plot for given the frequency range for Co/Gold-chloride/p-Si device. With this study, it has been shown that the rectifier contact of the organic-inorganic structure formed with suitable organic and inorganic semiconductor can be formed and this structure can be used in optoelectronic applications.
Effects of PEDOT:PSS and Crystal Violet Interface Layers on Current-Voltage Performance of Schottky Barrier Diodes as a Function of Temperature and Variation of Diode Capacitance with Frequency
(Elsevier, 2022) Deniz, A. R.; Tas, A. I.; Caldiran, Z.; Incekara, U.; Biber, M.; Aydogan, S.; Turut, A.
In this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied. The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT:PSS/CV/p-Si/Al diodes were fabricated. The I-V (current-voltage) characteristics of all diodes were analyzed at room temperature, it was determined that the PEDOT:PSS and CV materials improved the basic diode parameters. Also, I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al of diode were investigated for different temperature values. It has been determined that the basic diode parameters are strongly dependent on temperature. It was determined that while the barrier height (Fb) increased with increasing temperature, the ideality factor (n) and the series resistance (Rs) values decreased. Using temperature-dependent measurements, it was determined that the potential barrier and ideality factor values at the contact interface has a double Gaussian distribution. In addition, C-V (capacitance-voltage) measurements of these diodes were analyzed depending on the frequency. It was found that the diode capacitance decreased with increasing frequency.
Enhanced Photoresponse in MIS-Type UV-Vis Photodetector via Biocompatible Glutathione(C10H17N3O6S) Interlayer: Theoretical and Experimental Analysis
(Springer Nature, 2025) Yildirim, F.; Taskin, M.; Ben Ahmed, A.; Benhaliliba, M.; Incekara, U.; Aydogan, S.
Commercially available glutathione (GSH) compound isspin coated on n-Si wafer to passivate the surface of Si. The optical absorption and SEM analysis of the GSH film are performed. The optical bandgap energy of the GSH and the fundamental bandgap energy are equal to 5.526 eV and 6.325 eV, respectively. GSH presents much lower value of binding energy. It isobserved that the Au/GSH/n-Si MIS junction exhibited both a dark-rectifying ratio of 3370 and an excellent photoresponse in the visible light, UV and IR regions. Comparing the Au/GSH/n-Si junction with the Au/n-Si diode, the reverse current of the device containing the GSH interlayer decreased by more than 3 orders of magnitude. Since the low reverse current is essential for high performance in photodetectors, the photoresponse analysis of the device isinvestigated in detail. The highest responsivity and detectivity values under 365 nm UV light are 53.18 mA/W and 2.18 x 1011 Jones, respectively. Time-dependent I-V characteristics showed that the MIS device photosensitive device maintained its stability even after 110 days. These experimental results show that the Au/GSH/n-Si MIS photodetector has the potential for optical signal communication in a wide wavelength region.
Modification of Barrier Diode with Cationic Dye for High Power Applications
(Elsevier GmbH, 2021) Erdogan, E.; Yilmaz, M.; Aydogan, S.; Incekara, U.; Kacus, H.
Current-voltage (I-V) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at room temperature, in the dark and under illumination and also in a wide temperature range (100-360 K). Schottky diode showed non-ideal current-voltage behavior at 360 K and 100 K with ideality factors (n) equal to 1.81-1.46 and 3.52-2.73, respectively, using TE and Cheung methods. Experimental barrier height (phi(b)) values of the diode were determined as 0.29 eV for TE, 0.33 eV for Cheung and 0.38 eV for Norde at 100 K, and 0.79, 0.81, and 0.87 eV at 360 K, respectively. Series resistance (R-s) was found with the help of Cheung functions and Norde functions. The results show that the produced diode can be used in a variety of optoelectronic applications.