Browsing by Author "Sata, Mehmet"

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Analysis of Temperature Dependent Current-Voltage Characteristics of Sn/P-Gate Schottky Diode
(Elsevier, 2022) Duman, Songul; Gurbulak, Bekir; Sata, Mehmet
In present study, Sn/p-GaTe/In Schottky diode is fabricated using thermal evaporation method. The current-voltage (I-V) measurements of Sn/p-GaTe/In diode are carried out in the temperature range of 40-300 K with the steps of 10 K under dark conditions. While the ideality factor takes values between 1.03 and 1.24 at 300-180 K temperature range, it has values between 1.30 and 5.18 at 170-40 K temperature range. It is observed that the values of ideality factor and series resistance (RS) decrease with increasing temperature. The barrier height increases due to barrier inhomogeneity with increasing temperature since the current prefers to flow through the lowest barrier height with decreasing temperature. The temperature dependence of the inhomogeneous barrier height exhibites a double-Gaussian distribution. The mean barrier height and standard deviation values calculated from the barrier height versus 1/2 kT curve are 0.68 eV and 88.9 meV for the distribution-1 (D1) and 0.36 eV and 42.2 meV for the distribution-2 (D2), respectively. The Richardson constant (A*) value is calculated to be 41.7 for D1 and 55.0 A/K2cm2 for D2 from modified Richardson plot, respectively. These values are very close to the theoretical value of 55.8 A/K2cm2 for the p-GaTe semiconductor.
Electrical Characterization of In/P-Gase:Cd Single Crystal Grown by Bridgman/Stockbarger Method
(Amer Inst Physics, 2017) Gurbulak, Bekir; Sata, Mehmet; Ashkhasi, Afsoun; Yildirim, Muhammet; Duman, Songul
The temperature dependence of current voltage (I-V) characteristics of Au Ge/p-GaSe:Cd Schottky diode (SD) has been investigated in the temperature range of 40-360 K with a temperature step of 10 K under dark conditions. The characteristic parameters of the SD such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. It has been shown that the ideality factor increases while the barrier height decreases with decreasing temperature. The values of series resistance obtained from modified Norde's function. Series resistance values increase with decreasing temperature.
Growth and Structural Characterizations of GaSe and GaSe:Cd Single Crystals
(Amer Inst Physics, 2017) Ashkhasi, Afsoun; Gurbulak, Bekir; Sata, Mehmet; Turgut, Gaven; Duman, Songul
GaSe and GaSe:Cd single crystals used in this research were grown by using the Bridgman/Stockbarger method. All of the samples were freshly and gently cleaved with a razor blade from the grown ingots and no further polishing and cleaning treatments were required because of the natural mirror-like cleavage faces. The Samples were cleaved along the cleavage planes (001). The structure and lattice parameters of the undoped GaSe and GaSe:Cd semiconductors have been analyzed using a X-ray diffractometcr (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that GaSe and GaSe:Cd crystals have hexagonal structure, quite close 20 peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (500 degrees C). Cd doping causes a significant decrease in the XRD peak intensity.