Browsing by Author "Tataroglu, A."

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Electrical, Kinetic and Photoelectrical Properties of Cualmnmg Shape Memory Alloy/N-Si Schottky Diode
(Elsevier Science Sa, 2021) Canbay, C. Aksu; Tataroglu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
In this study, the copper-aluminum-manganese-magnesium (Cu-Al-Mn-Mg) shape memory alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics of the diode were examined by using illumination intensity and frequency dependent current and admittance measurements. Basic electrical parameters such as barrier height (phi b0), ideality factor (n), and series (Rs) and shunt (Rsh) resistances of the generated diode were obtained from the measured current-voltage (I-V) data using thermionic emission (TE) theory. Illumination impact on the diode parameters indicate that the device displays photoconducting behavior. Furthermore, the phi b0 value was established from Norde method. There is a good agreement between phi b0 values acquired from conventional I-V and Norde method. It was observed that the rise in the applied illumination intensity increased the values of Rs and Rsh. In addition, the ad-mittance (Y=G+i omega C) measurements were carried out in a wide frequency range. As a result of the experi-mental measurements, it has been shown that the produced CuAlMnMg/n-Si Schottky diode can be operated in optoelectronic practices, especially as a photodiode. (c) 2021 Elsevier B.V. All rights reserved.
The Electronic and Optoelectronic Properties of Al/Hydroxymethyl Functionalized Zn(II)PC/P-Si Photonic Device
(Springer, 2024) Al-Sehemi, Abdullah G. G.; Ocakoglu, Kasim; Ince, Mine; Karabulut, Abdulkerim; Tataroglu, A.; Dere, Aysegul; Yakuphanoglu, F.
In this study, the effects of illumination on the electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si/Al photonic device have been investigated under dark and various lighting conditions. The diode's electronic parameters have been extracted from the current-voltage characteristics. It is observed that the dark current value increases when the light is illuminated on the device, and thus, the photocurrent is formed, and this result has shown that the studied device exhibits a photoconductive behavior. The photoresponse properties of the fabricated device have been examined by transient photocurrent measurements under 100 mW/cm(2) illumination, and they have also been analyzed using photocapacitance and photoconductivity measurements at different frequencies (100 kHz, 500 kHz, and 1 MHz). However, the capacitance data that may occur between the poles of the produced device have also been investigated, and it is thought that the device can also be developed as a capacitor. These results confirm that the hydroxymethyl functionalized Zn(II)Pc and p-silicon semiconductor-based device can be used particularly in electro-optic and photonic applications.
Optoelectronic and Photonic Characteristics of Al/P-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer
(Springer, 2023) Al-Sehemi, Abdullah G. G.; Tataroglu, A.; Karabulut, Abdulkerim; Dere, Aysegul; Al-Ghamdi, Ahmed A. A.; Yakuphanoglu, F.
Al/ZnO/p-Si diodes have been fabricated using different doping concentrations of a boric acid (H3BO3)-doped zinc oxide (ZnO) interlayer. The boric acid-doped ZnO films were obtained by the sol-gel method and coated by the spin-coating technique. The optoelectronic and electronic properties of the prepared diodes were studied under different illumination and frequency conditions. Current measurements of the diodes under both dark and illumination indicate that they exhibit a photovoltaic behavior. The diode with 5 wt.% H3BO3-doped ZnO interlayer showed the best diode properties with a rectification ratio of 4.23 x 10(4) at & PLUSMN; 5 V. Also, the photocurrent, photoconductance, and photocapacitance transients of the diodes prove that they exhibit both photodiode and photocapacitor behavior. In addition, the capacitance and conductance measurements of the diodes were carried out over a wide frequency range. The results denote that the generated diodes can be utilized as photo-diode/capacitors in optoelectronic technologies.
The Photo-Electrical Performance of the Novel Cualmnfe Shape Memory Alloy Film in the Diode Application
(Elsevier, 2021) Canbay, C. Aksu; Tataroglu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Bektas, A.; Yakuphanoglu, F.
In this study, the Cu-Al-Mn-Fe shape memory alloy (SMA) was prepared using arc melting technique. The alloy was examined with help of X-ray diffraction (XRD) and differential scanning calorimetry (DSC) methods. We fabricated Cu-Al-Mn-Fe/n-Si diode by forming the shape memory alloy thin film on n-type silicon. The current-voltage (I-V) measurement of the diode was carried out under different intensities of illumination. The reverse bias current value of the diode under light was found to be greater than the dark condition. The obtained result shows that the diode displays a photoconducting feature. The main electrical parameters of the structure were obtained from the conventional I-V and Norde method. Besides, the transient photocurrent (TPC) measurement was performed under the various illumination intensity conditions. In addition to these experiments, the measurements of the conductance/capacitance-voltage (G/C-V) were carried out at room temperature and different frequencies. It was found that both G and C are quite sensitive to frequency.
The Structural, Electrical, and Photoelectrical Properties of Al/Cu2CdSnS4 Chalcogenide Film/P-Si Schottky-Type Photodiode
(Springer, 2023) Al-Sehemi, Abdullah G.; Tataroglu, A.; Dere, Aysegul; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach and deposited on the p-type silicon wafer by the use of the sol-gel technique. Then, the CCTS based Al/Cu2CdSnS4 (CCTS)/p-Si/Al photodiode was produced. The prepared CCTS film was analyzed using various characterization methods such as energy-dispersive X-ray (EDX or EDS), scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectroscopy. Optoelectronic and electronic attributes of the generated photodiode were investigated under the solar light and frequency conditions. The obtained data from the current measurements based on illumination intensity showed that the generated diode exhibits a photovoltaic and photoconductive behavior. In addition, it is found that the conductance and capacitance features of the diode were quite sensitive to frequency. The obtained outcomes indicated that the produced structure could be used in optoelectronic technology, especially in photodiode and solar cell applications.