Optimization of Electrode, Interlayer and Absorber Layers of a Gr/Res2 Photovoltaic Solar Cell with Scaps

Abstract

Porous silicon (PSi) improves the performance of commonly used silicon solar cells due to its large surface-to-volume ratio and high light absorption capability. PSi increases light absorption and power conversion efficiency (PCE) compared to traditional silicon solar cells. Due to the unique optical properties of transition metal dichalcogenides (TMDCs), device performance improves when a TMDC layer is added to PSi-based photonic devices. However, only three studies in the literature have investigated TMDC/PSi structures so far. In this study, a Gr/ReS2/PSi/p-cSi solar cell structure is discussed. In the proposed structure, Gr, ReS2 and PSi are used as transparent conductive electrode, interlayer and absorber, respectively. The effects of thicknesses, N-C and N-V, and doping concentrations of the graphene, ReS2 and PSi layers are examined and the layers are optimized. J(SC), V-OC, FF and PCE values of the optimized device are calculated as 32.83 mA/cm(2), 0.88 V, 80.72% and 23.35%, respectively. In addition, 84.5% external quantum efficiency (EQE) at 550 nm and 0.467 A/W R at 790 nm are obtained. The proposed device demonstrates higher efficiency and V-OC and FF values than the studies in the literature are obtained with the proposed structure. In addition, the reflectance of PSi and ReS2/PSi layers on a silicon (Si) substrate are calculated, and it is observed that these layers decrease reflectance due to their small refractive index. To the best of our knowledge, there is no study in the literature using ReS2 as an interlayer material. It is expected that the obtained results will be of benefit for future experimental and theoretical solar cell studies containing ReS2 layers.