Arslan, Kamer OzgeAksakal, RukiyeCakmak, Bulent2026-03-262026-03-2620211054-660X1555-661110.1088/1555-6611/ac30132-s2.0-85119205749https://doi.org/10.1088/1555-6611/ac3013https://hdl.handle.net/20.500.14901/2007Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons (N-t) and the output power (P (out)-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results.eninfo:eu-repo/semantics/closedAccessRate EquationsSemiconductor LaserTransient and Steady CharacteristicsInGaAsGaAs and AlGaAsInP LasersArticle