Modification of Barrier Diode with Cationic Dye for High Power Applications
| dc.contributor.author | Erdogan, E. | |
| dc.contributor.author | Yilmaz, M. | |
| dc.contributor.author | Aydogan, S. | |
| dc.contributor.author | Incekara, U. | |
| dc.contributor.author | Kacus, H. | |
| dc.date.accessioned | 2026-03-26T14:40:18Z | |
| dc.date.available | 2026-03-26T14:40:18Z | |
| dc.date.issued | 2021 | |
| dc.description | İncekara, Ümit/0000-0002-3283-5841; Erdoğan, Erman/0000-0003-2566-3284; Aydogan, Sakir/0000-0001-5190-8121; Yilmaz, Mehmet/0000-0002-4368-8453 | en_US |
| dc.description.abstract | Current-voltage (I-V) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at room temperature, in the dark and under illumination and also in a wide temperature range (100-360 K). Schottky diode showed non-ideal current-voltage behavior at 360 K and 100 K with ideality factors (n) equal to 1.81-1.46 and 3.52-2.73, respectively, using TE and Cheung methods. Experimental barrier height (phi(b)) values of the diode were determined as 0.29 eV for TE, 0.33 eV for Cheung and 0.38 eV for Norde at 100 K, and 0.79, 0.81, and 0.87 eV at 360 K, respectively. Series resistance (R-s) was found with the help of Cheung functions and Norde functions. The results show that the produced diode can be used in a variety of optoelectronic applications. | en_US |
| dc.identifier.doi | 10.1016/j.ijleo.2021.166598 | |
| dc.identifier.issn | 0030-4026 | |
| dc.identifier.issn | 1618-1336 | |
| dc.identifier.scopus | 2-s2.0-85101518732 | |
| dc.identifier.uri | https://doi.org/10.1016/j.ijleo.2021.166598 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14901/1605 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier GmbH | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Organic Component | en_US |
| dc.subject | Schottky Diode | en_US |
| dc.subject | Electrical Characteristics | en_US |
| dc.subject | Methylene Blue | en_US |
| dc.subject | Barrier Height | en_US |
| dc.subject | Ideality Factor | en_US |
| dc.subject | Interface States Density | en_US |
| dc.title | Modification of Barrier Diode with Cationic Dye for High Power Applications | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | İncekara, Ümit/0000-0002-3283-5841 | |
| gdc.author.id | Erdoğan, Erman/0000-0003-2566-3284 | |
| gdc.author.id | Aydogan, Sakir/0000-0001-5190-8121 | |
| gdc.author.id | Yilmaz, Mehmet/0000-0002-4368-8453 | |
| gdc.author.scopusid | 57191915398 | |
| gdc.author.scopusid | 57207275954 | |
| gdc.author.scopusid | 8598097200 | |
| gdc.author.scopusid | 6507573677 | |
| gdc.author.scopusid | 55937255800 | |
| gdc.author.wosid | Erdoğan, Erman/Gyu-8994-2022 | |
| gdc.author.wosid | Aydogan, Sakir/Acq-0004-2022 | |
| gdc.author.wosid | Kacus, Hatice/Lsk-9169-2024 | |
| gdc.author.wosid | Yilmaz, Mehmet/Hto-6056-2023 | |
| gdc.description.department | Erzurum Technical University | en_US |
| gdc.description.departmenttemp | [Erdogan, E.] Bilecik Seyh Edebali Univ, Vocat High Sch, Elect Commun Technol Program, Bilecik, Turkey; [Yilmaz, M.] Ataturk Univ, KK Educ Fac, Dept Sci Teaching, TR-25240 Erzurum, Turkey; [Yilmaz, M.; Aydogan, S.] Ataturk Univ, Grad Sch Nat & Appl Sci, Dept Nanosci & Nanoengn, Adv Mat Res Lab, TR-25240 Erzurum, Turkey; [Aydogan, S.; Kacus, H.] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey; [Incekara, U.] Ataturk Univ, Fac Sci, Dept Biol, TR-25240 Erzurum, Turkey; [Incekara, U.] Erzurum Tech Univ, Fac Sci, Dept Basic Sci, TR-25240 Erzurum, Turkey | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q1 | |
| gdc.description.volume | 232 | en_US |
| gdc.description.woscitationindex | Science Citation Index Expanded | |
| gdc.description.wosquality | N/A | |
| gdc.identifier.wos | WOS:000636238000001 |